D. A. Usanov, A.V. Skripal
PHYSICS OF SEMICONDUCTOR DEVICES OPERATION
IN MICROWAVE CIRCUITS
Published in Russia in 1999.
Abstract
    In the monograph D.A.Usanov, A.V. Skripal “Physics of semiconductor devices operation in microwave circuits” the new approach to the description of physics principles of semiconductor devices operation in the microwave circuits is reported. The solution of the problems concerning the character of distribution of electromagnetic fields in the specific electrodynamics systems have been provided in consideration of the dependencies of semiconductor structure parameters on the power level of influencing microwave signal.
    The original results of theoretical and experimental researches of effects of nonlinear interaction of electromagnetic fields with tunnel diodes, Gunn diodes, avalanche-transit-time diodes, Schottky barrier diodes and diodes based on p—n-junctions, p—i—n-diodes, FET and bipolar microwave transistors are summarized.
    The description of the new phenomena and regularities, typical for solid state microwave devices, is presented. The main characteristics of the new types of devices, based on author’s inventions, are presented, as well.
    Key words and phrases: physics, semiconductor devices, microwave circuits.
Publication has been supported by Russia fund of fundamental researches on project 98-02-30036.

Contents
Summary
About authors: D. A. Usanov, A.V. Skripal



Authors Addresses: Saratov State University, Astrakhanskaya st., 83, Saratov, Russia, 410026
E-mail: usanovda@info.sgu.ru
E-mail: skripala_v@info.sgu.ru
Fax: (7-8452)-24-04-46
http://www.sgu.ru/solid