D. A. Usanov, A.V. Skripal
PHYSICS OF SEMICONDUCTOR DEVICES OPERATION
IN MICROWAVE CIRCUITS
Published in Russia in 1999.
In the monograph D.A.Usanov, A.V. Skripal “Physics
of semiconductor devices operation in microwave circuits” the new approach
to the description of physics principles of semiconductor devices operation
in the microwave circuits is reported. The solution of the problems concerning
the character of distribution of electromagnetic fields in the specific
electrodynamics systems have been provided in consideration of the dependencies
of semiconductor structure parameters on the power level of influencing
The original results of theoretical and experimental
researches of effects of nonlinear interaction of electromagnetic fields
with tunnel diodes, Gunn diodes, avalanche-transit-time diodes, Schottky
barrier diodes and diodes based on p—n-junctions, p—i—n-diodes, FET and
bipolar microwave transistors are summarized.
The description of the new phenomena and regularities,
typical for solid state microwave devices, is presented. The main characteristics
of the new types of devices, based on author’s inventions, are presented,
Key words and phrases: physics, semiconductor devices,
Publication has been supported by Russia fund of fundamental researches
on project 98-02-30036.
About authors: D. A. Usanov, A.V.
Authors Addresses: Saratov State University, Astrakhanskaya
st., 83, Saratov, Russia, 410026