They
are designed for: non-destructive
measurement of parameters of metal and dielectric
films during techno-logical process and on final
products. The measurement system allows one to measure
thickness of metal-dielectric and absorbing films
in nanometer range with accuracy, unachievable before.
Field
of application: micro- and nanoelectronics,
interfe-rence microscopy, instrument-making industry,
machine-building, acoustoelectronics, chemical industry,
medical technics.
In
comparison with analogs the multiparameter
measurement with extended range of parameters values
is provided.
|
|
р |
Device
for
radio-wave measurements
It consists
of microwave sensor, preamplifier,
memory sell, power supply, zero correction system,
data processing unit.
Operation
principle is based on the autodyne
detection effect. Semi-conductor oscillator operates
in the autodyne detection mode. Microwave active
element (Gunn diode, microwave transistor) is the
source and the receiver simultane-ously.
The device provides
one with input, digital processing and storing information
in computer.
|
|
а |
Device for
video measurements
It
consists of video camera, micro-interferometer
MII-4, software.
Operation
principle is based on the use of discovered
regularities in fringe pattern on the border of metal-dielectric
and absorbing films, of modern systems for image processing
and of unique software interface.
The device provides one with input of high-resolution
image, its prosessing and storing the results of measurements.
|
|
а |
| Performance
specification: |
|
Measurements range: |
| metal
films |
| 0.01-15.0
mm |
| dielectric
films |
| 1-1000
mm |
|
Measurements inaccuracy: |
| 10% |
|
Resolving power: |
| 2
nm |
|
Metal film materials: |
aluminium,
vanadium, copper,
nickel, titanium, chromium |
|
Substrate materials: |
silicon,
gallium arsenide,
sapphire, glass, quartz |
|
Measurement duration: |
| not
more than 10 s |
|
Power supply: |
| 220
± 20 V, 50-60 Hz. |
|
|
